Current-voltage characteristics and $P-E$ loops are simulated inSrRuO$_{3}$/BaTiO$_{3}$/Pt tunneling junctions with interfacial dead layer. Theunswitchable interfacial polarization is coupled with the screen charge and thebarrier polarization self-consistently within the Thomas-Fermi model and theLandau-Devonshire theory. The shift of P-E loop from the center position andthe unequal values of the positive coercive field and the negative coercivefield are found, which are induced by the asymmetricity of interface dipoles. Acomplete J-V curve of the junction is shown for different barrier thickness,and the effect of the magnitude of interfacial polarization on the tunnelingcurrent is also investigated.
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